收藏本站
IXFA130N10T
IXFP130N10T
Symbol
Test Conditions
Characteristic Values
TO-263 (IXFA) Outline
(T J = 25 ° C unless otherwise specified)
Min.
Typ.
Max.
g fs
C iss
C oss
C rss
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
55
93
5080
630
95
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
R G = 5 Ω (External)
30
47
44
28
104
ns
ns
ns
ns
nC
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
Q gs
Q gd
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
30
29
nC
nC
Dim.
A
A1
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
Inches
Min. Max.
.160 .190
.080 .110
R thJC
R thCH
TO-220
0.50
0.42
° C/W
° C/W
b
b2
c
c2
0.51
1.14
0.46
1.14
0.99
1.40
0.74
1.40
.020
.045
.018
.045
.039
.055
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
Source-Drain Diode
E
E1
9.65
6.86
10.29
8.13
.380
.270
.405
.320
Symbol Test Conditions
T J = 25 ° C unless otherwise specified)
Min.
Characteristic Values
Typ. Max.
e
L
L1
2.54
14.61
2.29
BSC
15.88
2.79
.100
.575
.090
BSC
.625
.110
I S
I SM
V GS = 0V
Repetitive, pulse width limited by T JM
130
350
A
A
L2
L3
L4
R
1.02
1.27
0
0.46
1.40
1.78
0.38
0.74
.040
.050
0
.018
.055
.070
.015
.029
V SD
t rr
I RM
Q rr
I F = 25A, V GS = 0V, Note 1
I F = 65A, -di/dt = 100A/ μ s
V R = 0.5 ? V DSS , V GS = 0V
67
4.7
160
1.0
V
ns
A
nC
TO-220 (IXFP) Outline
Notes: 1. Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
2. On through-hole packages, R DS(on) Kelvin test contact
location must be 5 mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
Pins:
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFA16N50P MOSFET N-CH 500V 16A D2-PAK
IXFA230N075T2-7 MOSFET N-CH 75V 230A TO-263-7
IXFA230N075T2 MOSFET N-CH 75V 230A TO-263AA
IXFA3N120 MOSFET N-CH 1200V 3A TO-263
IXFA3N80 MOSFET N-CH 800V 3.6A TO-263
IXFA4N100P MOSFET N-CH 1000V 4A D2PAK
IXFA4N100Q-TRL MOSFET N-CH 1000V 4A TO-263
IXFA4N100Q MOSFET N-CH 1000V 4A TO-263
相关代理商/技术参数
IXFA130N10T2 功能描述:MOSFET Trench T2 HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA14N60P 功能描述:MOSFET 600V 14A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA14N60P3 功能描述:MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N50P 功能描述:MOSFET 500V 16A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA16N60P3 制造商:IXYS Corporation 功能描述:MOSFET N-CH 600V 16A TO-263AA
IXFA180N10T2 功能描述:MOSFET Trench T2 HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFA20N50P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube